A High-Density MOS Static RAM Cell Using the Lambda Bipolar Transistor CHUNGYU WU AND YIH-FANG LIU Abstnrcr–Based upon the common-collector lambda bipolar transistor (LBT), which is built with p-well NMOS, and the Parasitic w-n BJT in a CMOS IC, a novel MOS static RAM eelf catled the LBT celf is pro-posed. Dynamic RAM: Dynamic RAM stores the data as a charge on the capacitor.
ELSEVIER PII:S0026-2692(96)00059-6 A study of static RAM cell using the Lambda Bipolar Transistor (LBT) Manju Sarkar, M. Satyam and A. Prabhakar Microelectronics and Computer Division, ITI Ltd, Bangalore 560 016, India. Static RAM provides faster access to data and is more expensive than DRAM. By C. Y. Wu. If C5 and WE both are low, it is a write operation. Figure 6-29.—SRAM MOS cell. Unlike dynamic RAM (DRAM), which stores bits in cells consisting of a capacitor and a transistor, SRAM does not have to be periodically refreshed.
When a particular cell is selected the corresponding X and Y selected lines are raised to a high potential. Two types of RAMs are quite popular and used inside the computers. Figure 9-2 Functional Equivalent of a Static RAM Cell 2n word by m bits static RAM n Address CS OE WE m Data input / output CS OE WE D G Data In Q WR SEL Data Out G = 1 → Q follows D G = 0 → data is latched. RAM is the volatile memory, and as its name suggests, any memory cell in this memory can be accessed randomly. Unlike dynamic RAM, it does not need to be refreshed.
Row Decoder A 10 A 4 Input Data Control I/O 7 I/O 0 Column Decoder Column I/O A 3 A 2 A 1 A 0 Memory Matrix 128 X 128 OE WE CS Figure 9-3 Block Diagram of 6116 Static RAM. A memory cell is provided having reduced read and write times, and a large current dynamic range between the standby mode and the read mode. SRAM gives fast access to data, but it is physically relatively large.…
OAI identifier: oai:nthur.lib.nthu.edu.tw:987654321/70155 Provided by: National Tsing Hua University Institutional … Fig.3.77 shows the dynamic RAM cell.
Unlike dynamic RAM, it does not need to be refreshed. Static RAM cell: The logic diagram of a static RAM cell is shown in Fig. It means that the stored bit … A New High-Density Low-Power Bipolar Static RAM Cell . Static RAM (SRAM) are available in bipolar, MOS technologies. When COLUMN (Sence) and ROW (Control) lines go high, the MOSFET conducts and charges the capacitor. In write operation, data on the D in input is written into the addressed cell while … It is 16 K x 1 RAM. In this new cell, the LBT and two poly-Si resistors form a bistable element with a PMOS access transistor. RAM chips come in various configurations and sizes. RAM - timing • Read process – Choose desired word by applying address – Ensure r/^w high – Push chip select high and wait for a clock edge • Read timing (CY7C102A, 256K ×4 Static RAM) –t AA, Address to valid data (12ns max) –t OHA, Data hold from address change (3 ns min) –t ACS, chip select to data valid (12 ns max) –t CSLZ The load elements can be, for example, diode clamped resistors or lateral PNP transistors.
Based upon the common-collector lambda bipolar transistor (LBT), which is built with p-well NMOS, and the parasitic n-p-n BJT in a CMOS IC, a novel MOS static RAM cell called the LBT cell is proposed. Year: 2012. a static RAM cell and its associated circuitry in block form Each memory cell can latch, or store, data in a stable state. The input data bit (1 or 0) is written into the cell by setting the flip-flop for a 1 and resetting the flip-flop for a 0 when the READ/ WRITE’ line is LOW (i.e., write).
Other articles where Static random-access memory is discussed: computer memory: Semiconductor memory: Static RAM (SRAM) consists of flip-flops, a bistable circuit composed of four to six transistors.
a high speed, low power bipolar static random access • memory featuring ecl i/0 and a collector-coupled memory cell by william r. griesbach
SRAM (static RAM) is random access memory that retains data bits in its memory as long as power is being supplied. When the READ/ WRITE’ line is HIGH, the flip-flop is unaffected. Publisher: Institute of Electrical and Electronics Engineers.
bipolar static RAM cell; figure 6-28, frame B, is bipolar junction transistor (BJT) static RAM cell; and figure 6-29 is a static RAM MOS cell. A bipolar ECL static RAM using polysilicon-diode loaded memory cell An integrated bipolar RAM cell and process for its manufacture is disclosed. a high speed, low power bipolar static random access • memory featuring ecl i/0 and a collector-coupled memory cell by william r. griesbach
bipolar static RAM cell; figure 6-28, frame B, is bipolar junction transistor (BJT) static RAM cell; and figure 6-29 is a static RAM MOS cell. Once a flip-flop stores a bit, it keeps that value until the opposite value is stored in it. 4.5. To enable Read and Write operation C3 must be low. Figure 6-29.—SRAM MOS cell.